| PART |
Description |
Maker |
| SGM2014 SGM2014AM |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
SONY[Sony Corporation]
|
| 3SK149 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| SGM2016AN SGM2016 |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| 3SK165 3SK165A 3SK165A-0 3SK165A-1 |
GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET
|
Sony Corporation
|
| 3SK299 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
|
Hitachi Semiconductor
NEC
|
| 3SK206 |
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
|
NEC
|
| GN1022 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
Panasonic Semiconductor
|
| 3SK22507 3SK225 |
Silicon N Channel Dual Gate MOS Type TV Tuner, VHF RF Amplifier Applications
|
Toshiba Semiconductor
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| 3SK291 E007197 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 3SK292 E007198 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, VHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
